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| DC COMPONENTS CO., LTD. R TIP31C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in general purpose amplifier and switching applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .625(15.87) .570(14.48) .405(10.28) .380(9.66) .185(4.70) .173(4.40) .151 Typ .055(1.39) (3.83) .045(1.15) .295(7.49) .220(5.58) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .350(8.90) .330(8.38) 123 .640 Typ (16.25) Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 100 100 5 3 40 +150 -55 to +150 Unit V V V A W o o .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO ICES ICEO IEBO (1) Min 100 100 25 10 3 Typ - Max 200 300 1 1.2 1.8 50 - Unit V V A A mA V V MHz Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 VCE=100V, IB=0 VCE=60V, IB=0 VEB=5V, IC=0 IC=3A, IB=375mA IC=3A, VCE=4V IC=1A, VCE=4V IC=3A, VCE=4V IC=0.5A, VCE=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat) VBE(on) hFE1 hFE2 fT Transition Frequency (1)Pulse Test: Pulse Width 380s, Duty Cycle 2% |
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